PART |
Description |
Maker |
VN0116N3P015 VN0116N3P012 VN0116N3P008 |
250 mA, 160 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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SUPERTEX INC
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BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51 |
General Purpose Transistors - SOT89; VCEO=60V; hFE=100...250 General Purpose Transistors - SOT89; VCEO=45V; hFE=100...250 General Purpose Transistors - SOT89; VCEO=45V; hFE=40...250 General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160 General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160 General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160 PNP SILICON AF TRANSISTORS
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INFINEON[Infineon Technologies AG]
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W49V002T W49V002P |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Winbond Electronics Corp
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TA1318NG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 同步处理器,频率计数器集成电路电视分量信
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Toshiba, Corp.
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SSM6P15FU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 High Speed Switching Applications
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Toshiba Corporation Toshiba Semiconductor
|
FQB3N25 FQI3N25 FQI3N25TU |
250V N-Channel QFET 250 N-Channel MOSFET 250V N-Channel MOSFET 2.8 A, 250 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
http:// FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5 160 A, 1600 V, SCR MODULE-5 160 A, 1200 V, SCR MODULE-5 160 A, 1400 V, SCR MODULE-5 120 A, 800 V, SCR MODULE-5 75 A, 800 V, SCR 100 A, 1600 V, SCR 160 A, 800 V, SCR 160 A, 600 V, SCR
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Unisonic Technologies Co., Ltd.
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1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 Zener Voltage Regulator Diode 齐纳稳压二极 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB SILICON 50 WATT ZENER DIODES Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
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TE Connectivity, Ltd. Hammond Manufacturing Co., Ltd. STMicroelectronics N.V. B&K Precision, Corp. Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-SCOTTSDALE
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HDM160GS16 |
160 X 160 Dots Graphic, Low Power w/Touch Screen
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HANTRONIX[Hantronix,Inc]
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GMD81400 GMF11201 GMF10201 GMF90201 GMF10601 GMF10 |
CAPACITOR, VARIABLE, MICA, 250 V, 380 pF - 1300 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 880 pF - 2330 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 15 pF - 130 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 2000 V, 10 pF - 48 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 275 pF - 970 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 550 pF - 1600 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 65 pF - 340 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 450 pF - 1390 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 1300 pF - 2830 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 115 pF - 550 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 1150 pF - 2605 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 45 pF - 280 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 350 pF - 1180 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 190 pF - 760 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 780 pF - 2110 pF, PANEL MOUNT CAPACITOR, VARIABLE, MICA, 250 V, 650 pF - 1890 pF, PANEL MOUNT
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Sprague-Goodman Electronics, Inc.
|
MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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